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| (R) TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s AUDIO POWER AMPLIFIER s GENERAL POWER SWITCHING s DC-AC CONVERTER s EASY DRIVER FOR LOW VOLTAGE DC MOTOR s 3 1 2 TO-220 DESCRIPTION The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear and switching applications. The preferred complementary NPN type is the TIP102. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case 25 o C o T amb 25 C Storage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -8 -15 -1 80 2 -65 to 150 150 Unit V V V A A A W W o o C C April 2003 1/5 TIP105 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CBO I EBO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -30 V V CE = -60 V V EB = -5 V I C = -30 mA -60 Min. Typ. Max. -50 -50 -8 Unit A A mA V VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * V BE * h FE * Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain I C = -3 A I C = -8 A I C = -8 A I C = -3 A I C = -8 A I C = -3 A Group R Group O Group Y I F = - I C = 10 A I B = -6 mA I B = -80 mA V CE = -4 V V CE = -4 V V CE = -4 V V CE = -4 V 2000 200 2000 4000 8000 -2 -2.5 -2.8 18000 V V V 5000 9000 18000 -2.8 V VF * Forward Voltage of Commutation Diode (I B = 0) The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. Safe Operating Area DC Current Gain 2/5 TIP105 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 3/5 TIP105 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 4/5 TIP105 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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